氧化铟锌薄膜作为有效的高温铜扩散阻挡层

陈 开玉, 俞 健*
西南石油大学新能源与材料学院

摘要


银浆的高成本是制约硅异质结（SHJ）太阳电池产业化的关键因素，而铜金属化技术因其显著的成本优势被
认为是有效的替代方案。然而，铜在硅中的扩散问题是其应用的一大挑战。本文采用磁控溅射制备氧化铟锌（IZO）
薄膜作为铜扩散阻挡层，研究其扩散阻挡性能。Cu/IZO/Si样品在氩气气氛中进行退火处理，采用扫描电子显微镜、
俄歇电子能谱和X射线衍射对样品的微观结构和扩散行为进行表征。结果表明，IZO薄膜的扩散阻挡性能在500℃时
开始减弱，在700℃时完全失效。失效原因为高温退火过程中产生的热应力导致IZO薄膜出现大量孔洞，从而为Cu
和Si的扩散提供了通道，最终形成Cu3Si。本研究为开发高效稳定的铜扩散阻挡层提供了新的思路，有助于推动铜金
属化技术在光伏领域的应用。

关键词


氧化铟锌；扩散势垒；硅异质结太阳电池；铜金属化

全文:

PDF


参考


[1]Zhao Y, Procel P, Han C, et al. Strategies for realizing

high-efficiency silicon heterojunction solar cells[J]. Solar

Energy Materials and Solar Cells, 2023, 258: 112413.

[2]Sun Z, Chen X, et al. Toward efficiency limits

of crystalline silicon solar cells: Recent progress in highefficiency silicon heterojunction solar cells[J]. Advanced

Energy Materials, 2022, 12(23): 2200015.

[3]Lin H, Yang M, Ru X, et al. Silicon heterojunction

solar cells with up to 26.81% efficiency achieved by electrically

optimized nanocrystalline-silicon hole contact layers[J].

Nature Energy, 2023, 8(8): 789-799.

[4]Pingel S. Progress on the reduction of silver

consumption in metallization of silicon heterojunction solar

cells[J]. Solar Energy Materials and Solar Cells, 2024, 265:

112620.

[5]Yu J, Li J, Zhao Y, et al. Copper metallization of

electrodes for silicon heterojunction solar cells: Process,

reliability and challenges[J]. Solar Energy Materials and Solar

Cells, 2021, 224: 110993.

[6]Yu C, Gao K, Peng C W, et al. Industrial-scale

deposition of nanocrystalline silicon oxide for 26.4%-efficient

silicon heterojunction solar cells with copper electrodes[J].

Nature Energy, 2023, 8(12): 1375-1385.

[7]Lennon A, Colwell J, Rodbell K P. Challenges facing

copper-plated metallisation for silicon photovoltaics: Insights

from integrated circuit technology development[J]. Progress in

Photovoltaics: Research and Applications, 2019, 27(1): 67-97.

[8]Liu W L, Chen W J, Tsai T K, et al. Effect of tindoped indium oxide film thickness on the diffusion barrier

between silicon and copper[J]. Thin Solid Films, 2006, 515(4):

2387-2392.

[9]Yu J, Bian J, Jiang L, et al. Tungsten-doped indium

oxide thin film as an effective high-temperature copper

diffusion barrier[J]. ECS Solid State Letters, 2014, 3(6): N15-

N17.

[10]Benouattas N, Mosser A, Raiser D, et al. Behaviour

of copper atoms in annealed Cu/SiOx/Si systems[J]. Applied

surface science, 2000, 153(2-3): 79-84.




DOI: http://dx.doi.org/10.12361/2661-3654-07-02-143391

Refbacks

  • 当前没有refback。